Samsung has officially announced its new embedded Universal Flash Storage (eUFS) 2.1 with a 1TB storage capacity today. Additionally, the Korean electronics giant also said that the storage medium is already in mass production.
Prior to this, Samsung’s highest capacity eUFS 2.1 capacity was just 512GB. That storage medium first made its appearance with the launch of the Galaxy Note9, which took place last year during the brand’s Unpacked event at New York. Specs-wise, the the new 1TB eUFS 2.1 medium features 16 layers of 512 Gigabit V-NAND flash chips, stacked on top of another.
In terms of speed, the new 1TB eUFS 2.1 medium has sequential read and write speeds of 1000MB/s and 260MB/s, respectively. While its random read and writes speeds are rated for 58000 IOPS and 50000 IOPS, respectively.
The existence of the 1TB capacity eUFS 2.1 medium also lends feasibility to the possibility that Samsung’s premium version of its upcoming flagship smartphone, the Galaxy S10+, will be one of the first devices to actually feature the new storage capacity. Specifically, we’re talking about the Galaxy S10+ that comes with 12GB RAM and a choice between 256GB, 512GB, and 1TB of storage.
However, this is all just speculation at this point, and until we see what Samsung has to unveil during its 20 February event at San Francisco, we do advise you to take this news with the usual sprinkling of salt.
(Source: Samsung)
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