The Samsung Galaxy S6, codenamed Project Zero, looks mighty promising as more rumoured specification of the upcoming flagship is leaked. This time around, a report from a Korean newspaper indicates that future Samsung smartphones, starting from the Galaxy S6, would use a next-gen NAND storage which will offer a significant boost in performance.
The rumoured NAND storage is called UFS 2.0, which stands for Universal Flash Storage, and is capable of data transfer rates of up to 1.2GB/s. To put this into perspective, eMMC 5.0 memory – which is the current revision that is typically used in today’s smartphones – maxes out at 400MB/s; that’s three times slower than UFS’ theoretical maximum transfer rate.
On top of that, UFS also costs about the same to manufacture as eMMC. Power draw from UFS is also lower; as much as half the amount of power draw in comparison to eMMC. Because of this, manufacturers can decide if they want improved performance with the same power consumption of eMMC, or similar performance to eMMC with better battery life. With UFS being much better in every possible way, this memory storage standard will most definitely be the new defining standard of future smartphones.
In terms of real world improvement, UFS-equipped devices should have visibly faster boot times, app startups, and overall better responsiveness.
Samsung isn’t the only one looking to include UFS memory in its future phones. Xiaomi, which is hot on Samsung’s heels, is rumoured to be doing the same with its upcoming phones – which will definitely make 2015 an exciting year to watch.
(Source: ETNews via Tom’s Hardware, Engadget)
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